solid state control devices 32 device numbers units maximum ratings symbol vdrm sensitive non- sensitive repetitive peak off-state voltage repetitive peak reverse voltage gate open, and tj = 110 c vdrm & vrrm 50 100 200 400 600 hs04s hs14s hs24s hs44s hs64s hs04 hs14 hs24 hs44 hs64 HS07 hs17 hs27 hs47 hs67 volt rms on-state current at tc = 80o c and conduction, angle of 180o it(rms) 4.0 4.0 7.0 amp peak surge (non-repetitive) on-state current, one-cycle, at 50hz or 60hz itsm 40 40 80 amp peak gate - trigger current for 3sec. max. igtm 1 1 1 amp peak gate-power dissipation at igt igtm pgm 20 20 20 watt average gate - power dissipation pg(av) 0.2 0.2 0.5 watt storage temperature range tstg -40 to +150 c operating temperature range, tj toper -40 to +110 c electrical characteristics at specified case temperature peak off - state current, tc = 110 c vdrm & vrrm = max. rating idrm & irrm (1) 0.75 (1) 0.75 1.0 ma max. maximum on - state voltage, (peak) at tc = 25 c and it = rated amps vtm 2.2 2.2 2.0 volt max. dc holding current, gate open and tc = 25 c iho (1) 5 (1) 10 50 ma max. critical rate-of-rise of off-state voltage, gate open, tc = 110 c critical dv/dt (1) 5 (1) 5 100 v/sec. dc gate - trigger current for anode voltage = 6vdc, rl = 100 w and at tc = 25 c igt 200a 1.0 25 ma max. dc gate-trigger voltage for anode voltage = 6vdc, rl = 100 w and at tc = 25 c vgt 0.8 1.0 1.5 volt max. gate controlled turn-on time for td + tr, igt = 10 ma and tc = 25 c tgt 1.2 1.2 (2) 2.0 sec. thermal resistance, junction-to-case r 0 j-c 5 5 2.5 c / watt typ (1) r g-k = 1 k w (2) t gt measured with igt = 100 ma
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